Micro and
Nano Scale Research Lab
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FAMU-FSU
College of Engineering Department
of Mechanical Engineering |
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A conceptual view of the micro-to-nano integrated system realized through the localized synthesis and self-assembly of 1-dimensional nanostructures. We are interested in developing techniques for micro-to-nano integration and self-assembly. These techniques provide a basis for NEMS and hybrid device architecture while also presenting a platform for nanoscale characterization. Understanding how micro and nano scale components behave, particularly at the micro-nano interface, is of great importance when designing new nanoscale applications. The contact from the nanoscale components to the microscale and beyond is essential for our interface with such systems and devices. The microscale therefore becomes a tool for the interrogation of the nanoscale. In addition, our research activities focus on nanostructure synthesis and fabrication, optimization of nanostructure synthesis processes, the synthesis of novel nanomaterials, developing new techniques for nanomanufacturing and nanoscale characterization. Englander et al,
Applied Physics Letters, 2003 all scale bars =5µm Localized silicon nanowire growth on a suspended
polysilicon microbridge. (a) Silicon nanowire growth region on a 100 µm long and 5 µm wide
polysilicon bridge, where the growth region spans approximately 35 µm at the
center of the structure. (b) Closeup,
oblique view of the nanowires growth region, showing the shorter nanowire
region at the center of the structure where the heat dissipation rate is
believed to increase due to downward self-buckling of the structure. (c) Top view
illustrating the nanowires growth/nongrowth interface indicating the location
where the temperature was not sufficiently high to initiate nanowire growth. Englander et al,
Nano Letts, 2005 Electric-field assisted self assembly of
silicon nanowires. SiNWs response to an
electric field in the vicinity of a sharp tip. The growth structure is the
center structure, while double-tipped secondary structures are positioned 5 µm away. Significantly improved nanowires
organization is observed as the electric field strength amplifies to ~25 V/µm at the apex of the secondary
structure. TEM images of 1-dimensional nanostructures synthesized using the localized CVD process (all scale bars =100nm). |